PART |
Description |
Maker |
K3N9VU4000A-GC |
128M-Bit (8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
CMS4A16LAX-75XX |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
CMS4A16LAF CMS4A16LAG CMS4A16LAH |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
HY57V28820AT HY57V28820AT-H |
16Mx8|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
CMS4A16LAF |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp. NEC Corp.
|
TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
MBM29BS12DH15 MBM29BS12DH15PBT MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION[SPANSION]
|
MX25L12835FMI10G MX25L12835FM2I10G MX25L12835FZ2I1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
AM29PDL127H63VKI |
IC,EEPROM,NOR FLASH,8MX16,CMOS,BGA,80PIN,PLASTIC
|
amd
|
HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM 8M X 16 DDR DRAM, 0.6 ns, PDSO66 8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|